A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width
Anupama Anand, Reeta, D. S. Rawal, Rakhi Narang, Meena Mishra, Manoj Saxena, Mridula Gupta
Topics & Concepts
High-electron-mobility transistorEquivalent circuitSmall-signal modelMaterials scienceConsistency (knowledge bases)AND gateElectronic engineeringSIGNAL (programming language)OptoelectronicsEngineeringLogic gateTransistorElectrical engineeringMathematicsComputer scienceVoltageGeometryProgramming languageGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSilicon Carbide Semiconductor Technologies