Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors
Anupama Anand, Khushwant Sehra, Chanchal, Reeta, Rakhi Narang, D. S. Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta
Topics & Concepts
TransconductanceBarrier layerMaterials scienceOptoelectronicsHigh-electron-mobility transistorTransistorMole fractionThreshold voltageLayer (electronics)VoltageNanotechnologyElectrical engineeringChemistryPhysical chemistryEngineeringGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignSilicon Carbide Semiconductor Technologies