A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier
Tanvika Garg, Sumit Kale
Topics & Concepts
High-electron-mobility transistorOptoelectronicsMaterials scienceTransconductanceGallium nitrideHeterojunctionTransistorFabricationBarrier layerElectrical engineeringNanotechnologyVoltageLayer (electronics)EngineeringMedicineAlternative medicinePathologyGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices