An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing
Xi-Cai Lai, Zhenhua Tang, Junlin Fang, Leyan Feng, Dijie Yao, Li Zhang, Yanping Jiang, Qiu‐Xiang Liu, Xin‐Gui Tang, Yichun Zhou, Jie Shang, Gaokuo Zhong, Ju Gao
Abstract
The ever-growing information data has driven the pursuit of advanced BFCO thin-film synapses, which have multifunctionality, adjustable plasticity, unique photoelectric response, and optical memory effects detected by femtosecond lasers.
Topics & Concepts
Neuromorphic engineeringMaterials scienceNeural facilitationComputer scienceVon Neumann architectureFerroelectricityArtificial neural networkOptoelectronicsElectronic engineeringSynaptic plasticityArtificial intelligenceEngineeringChemistryBiochemistryDielectricOperating systemReceptorAdvanced Memory and Neural ComputingNeural Networks and Reservoir ComputingTransition Metal Oxide Nanomaterials