Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared
Miguel Montesinos‐Ballester, Elsa Jöchl, Victor Turpaud, Johannes Hillbrand, Mathieu Bertrand, Delphine Marris‐Morini, E. Gini, Jérôme Faist
Abstract
High Resolution Image Download MS PowerPoint Slide In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.3 cm –1 loss coefficient) have been obtained between 4.6 and 11.2 μm wavelengths (890–1960 cm –1 wavenumber), in both transverse electric (TE) and transverse magnetic (TM) polarization modes. The possibility of monolithically integrating such waveguides with mid-IR sources offers promising perspectives for developing broadband, homogeneously integrated systems.