Optical and electronic properties of defect chalcopyrite ZnGa<sub>2</sub>S<sub>4</sub>
S. G. Asadullayeva, N. A. Ismayilova, M. A. Musayev, I. I. Abbasov
Abstract
In this paper, we have performed a study on the optical properties of single crystals ZnGa 2 S 4 by method of density functional theory (DFT) and ellipsometry measurements. The calculated results for the real [Formula: see text] and imaginary [Formula: see text] parts of the dielectric function are compared with the measured experimental spectroscopic ellipsometry (SE) spectra in the 0.7–6.5 eV spectral region. Absorption coefficient-photon energy dependency revealed the existence of direct bandgap transitions with energy 3.5 eV. This result is very close to bandgap obtained from our theoretical calculation.
Topics & Concepts
Dielectric functionBand gapMaterials scienceEllipsometryPhoton energyDensity functional theoryAttenuation coefficientDielectricChalcopyriteAbsorption (acoustics)Spectral lineMolecular physicsCondensed matter physicsOpticsAtomic physicsPhotonPhysicsThin filmOptoelectronicsNanotechnologyQuantum mechanicsCopperComposite materialMetallurgyChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesCrystal Structures and Properties