Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors
Jack E. N. Swallow, Robert G. Palgrave, Philip A. E. Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B. Varley, T. D. Veal
Abstract
as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.
Topics & Concepts
Materials scienceBand gapBixbyiteElectronic structureSemiconductorIndiumHeterojunctionSurface photovoltageElectronic band structureSemimetalCondensed matter physicsChemical physicsOptoelectronicsChemistryPhysicsSpectroscopyQuantum mechanicsGa2O3 and related materialsZnO doping and propertiesElectronic and Structural Properties of Oxides