Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM
Jingwei Zhang, Fang Wang, Chuang Li, Xin Shan, Ange Liang, Kai Hu, Yue Li, Qi Liu, Yaowu Hao, Kailiang Zhang
Topics & Concepts
Resistive random-access memoryMaterials scienceElectrodeIndium tin oxideSubstrate (aquarium)Layer (electronics)X-ray photoelectron spectroscopyOptoelectronicsHigh-resolution transmission electron microscopyTinOxideBendingStress (linguistics)NanotechnologyComposite materialTransmission electron microscopyChemical engineeringChemistryMetallurgyEngineeringPhysical chemistryOceanographyLinguisticsPhilosophyGeologyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of Oxides