Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation
Minh‐Tan Ha, Le Van Lich, Yun‐Ji Shin, Si‐Young Bae, Myung‐Hyun Lee, Seong‐Min Jeong
Abstract
Silicon carbide (SiC) is an ideal material for highpower and highperformance electronic applications. Topseeded solution growth (TSSG) is considered as a potential method for bulk growth of highquality SiC single crystals from the liquid phase source material. The crystal growth performance, such as growth rate and uniformity, is driven by the fluid flow and constitutional flux in the solution. In this study, we numerically investigate the contribution of the external static magnetic field generated by Helmholtz coils to the fluid flow in the silicon melt. Depending on the setup of the Helmholtz coils, four static magnetic field distributions are available, namely, uniform vertical upward/downward and vertical/horizontal cusp. Based on the calculated carbon flux coming to the crystal surface, the vertical downward magnetic field proved its ability to enhance the growth rate as well as the uniformity of the grown crystal.