Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer
Longtao Li, Xin Liu, Junhan Guo, Hongyu Ji, Fan Zhang, Zhidong Lou, Liang Qin, Yufeng Hu, Yanbing Hou, Feng Teng
Abstract
The fabrication of organic–inorganic perovskite field-effect transistors (FETs) with polymer gate dielectrics is challenging because of the solvent corrosion and wettability issues at interfaces. A few polymers have been integrated into perovskite transistors; however, these devices have high operating voltages due to low dielectric constants. Herein, poly(vinylidenefluoride- co -trifluoroethylene) (PVDF-TrFE) with a high dielectric constant is introduced into bottom-gate phenylethylammonium tin iodide perovskite [(PEA) 2 SnI 4 ] FETs. Polytetrafluoroethylene (PTFE) and cross-linked poly(4-vinylphenol) (PVP) (CL-PVP) are used to address the issues of solvent corrosion and wettability. We design the PVDF-TrFE/PTFE and PVDF-TrFE/PTFE/CL-PVP dielectric layers, where the ferroelectric properties of PVDF-TrFE are reduced by PTFE. The (PEA) 2 SnI 4 FETs operate at relatively low gate voltages, exhibiting good overall performance with average hole mobilities of 0.42 and 0.36 cm 2 V –1 s –1 . Our findings provide a feasible strategy for constructing low-operating-voltage perovskite FETs with large-dielectric-constant ferroelectric polymers as gate dielectrics by a solution processing technique.