Ferroelectric Domain Wall p–n Junctions
Jesi R. Maguire, Conor J. McCluskey, Kristina M. Holsgrove, Ahmet Suna, Amit Kumar, Raymond G. P. McQuaid, J. M. Gregg
Abstract
High Resolution Image Download MS PowerPoint Slide We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that in-operando potential profiles and extracted electric fields, associated with p–n junctions contained within the walls, can be fully rationalized through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones and space-charge fields) normally associated with extrinsically doped semiconductor p–n junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between p and n regions, at the core of conventional p–n junction behavior, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.