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Electrical Characterization of highly stable 10nm triple-gate FinFET for different contacts and oxide region materials

Kalasapati Bindu Madhavi, Suman Lata Tripathi

2022Silicon14 citationsDOI

Topics & Concepts

Materials scienceTransconductanceThreshold voltageOptoelectronicsSubthreshold slopeTransistorVoltageSubthreshold conductionElectrical engineeringElectronic engineeringEngineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies
Electrical Characterization of highly stable 10nm triple-gate FinFET for different contacts and oxide region materials | Litcius