Observation of inverse Anderson transitions in Aharonov-Bohm topolectrical circuits
Haiteng Wang, Weixuan Zhang, Houjun Sun, Xiangdong Zhang
Abstract
It is well known that Anderson transition is a disorder-induced metal-insulator transition. Contrary to this conventional wisdom, some investigations have shown that disorders could destroy the phase coherence of localized modes in flat bands, making the localized states melt into extended states. This phenomenon is called the inverse Anderson transition. To date, the experimental observation of inverse Anderson transitions is still lacking. In this work, we report the implementation of inverse Anderson transitions based on Aharonov-Bohm topolectrical circuits. Different types of disorders, including symmetric-correlated, antisymmetric-correlated, and uncorrelated disorders, can be easily implemented in Aharonov-Bohm circuits by engineering the spatial distribution of ground settings. Through the direct measurements of frequency-dependent impedance responses and time-domain voltage dynamics, the inverse Anderson transitions induced by antisymmetric-correlated disorders are clearly observed. Moreover, the flat bands and associated spatial localizations are also fulfilled in clean Aharonov-Bohm circuits or Aharonov-Bohm circuits sustaining symmetric-correlated and uncorrelated disorders, respectively. Our proposal provides a flexible platform to investigate the interplay between the geometric localization and Anderson localization, and could have potential applications in electronic signal control.