DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer
Ashutosh Chakrabarty, N. K. Sahoo, Asisa Kumar Panigrahy, V. Bharath Sreenivasulu, Raghunandan Swain
Abstract
Abstract The DC and RF assessment of critical barrier-AlGaN/GaN nano channel tri-gate fin-shaped High Electron Mobility Transistor (FinHEMT) is investigated for Enhancement-mode (E-mode) operation. We propose and analyze critical barrier layer (CBL) and critical-strained barrier layer (CSBL) FinHEMT for a fixed fin-shaped channel width ( W fin = 160 nm) and height ( H fin = 70 nm). The CBL FinHEMT ensures an E-mode operation by depleting two-dimensional electron gas (2DEG) near the channel region between AlGaN and GaN hetero-junction. The extracted threshold voltage ( V T ) in CBL FinHEMT is 0.4 V as compared to −0.2 V obtained in CSBL FinHEMT. However, increased gate leakage current density and poor gate voltage swing in CBL FinHEMT is improved through a metal-oxide-semiconductor FinHEMT (FinMOSHEMT) structure by the incorporation of Al 2 O 3 gate oxide layer between the tri-gate and CBL AlGaN layer. It results in a stable positive V T of 0.5 V due to the negatively charged Al 2 O 3 /barrier interface fixed charge density ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi mathvariant="italic">Al</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mi>O</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:msub> </mml:math> ). The proposed CBL FinMOSHEMT has also been studied for different atomic layer deposition Al 2 O 3 process-dependent variations in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi mathvariant="italic">Al</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mi>O</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:msub> <mml:mo>.</mml:mo> </mml:math> The maximum on-state drain current and transconductance of 1.01 A mm −1 and 430 mS/mm have been extracted respectively with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>N</mml:mi> </mml:mrow> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi mathvariant="italic">Al</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> <mml:msub> <mml:mrow> <mml:mi>O</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>3</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:msub> </mml:math> of −9.2 × 10 12 cm −2 . Further, the RF analysis of the proposed CBL FinMOSHEMT structure with the same dimension exhibits improved f T and f max responses with 27 GHz and 90 GHz respectively over CBL FinHEMT. The results of the frequency responses obtained for the proposed design make it suitable for power electronics applications.