Advancing high-performance visible light communication with long-wavelength InGaN-based micro-LEDs
Fu‐He Hsiao, Wen‐Chien Miao, Tzu‐Yi Lee, Yi-Hua Pai, Yu-Ying Hung, Daisuke Iida, Chun‐Liang Lin, Chi‐Wai Chow, Gong‐Ru Lin, Kazuhiro Ohkawa, Hao‐Chung Kuo, Yu‐Heng Hong
Abstract
This study showcases a method for achieving high-performance yellow and red micro-LEDs through precise control of indium content within quantum wells. By employing a hybrid quantum well structure with our six core technologies, we can accomplish outstanding external quantum efficiency (EQE) and robust stripe bandwidth. The resulting 30 μm × 8 micro-LED arrays exhibit maximum EQE values of 11.56% and 5.47% for yellow and red variants, respectively. Notably, the yellow micro-LED arrays achieve data rates exceeding 1 Gbit/s for non-return-to-zero on-off keying (NRZ-OOK) format and 1.5 Gbit/s for orthogonal frequency-division multiplexing (OFDM) format. These findings underscore the significant potential of long-wavelength InGaN-based micro-LEDs, positioning them as highly promising candidates for both full-color microdisplays and visible light communication applications.