Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits
Thomas Hazard, Wayne Woods, D. Rosenberg, Rabindra Das, Cyrus F. Hirjibehedin, David Kim, J.M. Knecht, Justin Mallek, Alexander Melville, Bethany M. Niedzielski, Kyle Serniak, Katrina Sliwa, D. Yost, Jonilyn Yoder, William D. Oliver, Mollie E. Schwartz
Abstract
The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.