Rapid and Large-Scale Quality Assessment of Two-Dimensional MoS<sub>2</sub> Using Sulfur Particles with Optical Visualization
Jingying Zheng, Haotian Du, Fan Jiang, Ziming Zhang, Baisheng Sa, Wenhui He, Liying Jiao, Hongbing Zhan
Abstract
The efficient nondestructive assessment of quality and homogeneity for two-dimensional (2D) MoS2 is critically important to advance their practical applications. Here, we presented a rapid and large-area assessment method for visually evaluating the quality and uniformity of chemical vapor deposition (CVD)-grown MoS2 monolayers simply with conventional optical microscopes. This was achieved through one-pot adsorbing abundant sulfur particles selectively onto as-grown poorer-quality MoS2 monolayers in a CVD system without any additional treatment. We further revealed that this favorable adsorption of sulfur particles on MoS2 originated from their intrinsic higher-density sulfur vacancies. Based on unadsorbed MoS2 monolayers, superior performance field effect transistors with a mobility of ∼49 cm2 V–1 s–1 were constructed. Importantly, the assessment approach was noninvasive due to the all-vapor-phase and moderate adsorption–desorption process. Our work offers a new route for the performance and yield optimization of devices by quality assessment of 2D semiconductors prior to device fabrication.