Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
Y.C. Wu, K. Garello, W. Kim, M. Gupta, M. Perumkunnil, V. Kateel, S. Couet, R. Carpenter, S. Rao, S. Van Beek, K.K. Vudya Sethu, F. Yasin, D. Crotti, G.S. Kar
Abstract
To address the large energy dissipation of our current computing architecture, nonvolatile voltage-gate-assisted spin-orbit-torque (VGSOT) MRAM combines the advantages of spin-orbit-torque (SOT) and voltage control of magnetic anisotropy (VCMA) systems. Here the authors study VGSOT writing with perpendicular magnetic tunnel junctions, and show it to be reliable, with low error rate and resilience to intensive writing stresses. The spin Hall angle and VCMA coefficient allow 30-nm junctions. A multipillar design is suggested, with high density close to 2-terminal devices and high-speed write/read performance at low operating power, suitable for embedded memory or in-memory computation.