Analytical Current Transport Model of Silicene-based TFETs
Farhana Afrin, Sabbir Hossain, Md. Tabil Ahammed
20222022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT)97 citationsDOI
Abstract
The armchair silicene nanoribbon (ASiNR) has evolved into a stable structure as the channel material in tunnel field-effect transistors (TFET), which has led to their development. When designing an ASiNR with a thickness of 1.4 nm, it is essential to consider a bandgap opening that can be tuned to 0.56 eV. An analytical review of the functionality of the item has been completed. The device demonstrates a shallow sub-threshold swing of 8mV/decade and an off-state leakage current of 29nA/µm.
Topics & Concepts
SiliceneMaterials scienceTransistorOptoelectronicsCurrent (fluid)SwingChannel (broadcasting)Field-effect transistorSubthreshold swingLeakage (economics)Engineering physicsElectrical engineeringPhysicsSiliconEngineeringVoltageAcousticsEconomicsMacroeconomicsGraphene research and applicationsAdvanced Memory and Neural ComputingAdvancements in Semiconductor Devices and Circuit Design