Realizing p‐type performance in low‐thermal‐conductivity BiSbSe <sub>3</sub> via lead doping
Sining Wang, Han-Chen Lu, D Li, Yang Jin, Xing-Yi Li, Yan Yan, Kai Gu, Yuting Qiu, Li‐Dong Zhao
Abstract
摘要 BiSbSe 3 是一种本征 n 型热电材料，由于具有低晶格热导率和多能带结构吸引了广泛的研究兴趣，在中温区表现出优 异的热电性能。但目前罕有对 p 型BiSbSe 3 的研究。本工作通过掺杂Pb成功制备了 p 型BiSbSe 3 ，并研究了其热电传 输性能。结果表明， Pb的掺杂可以进一步降低BiSbSe3 的热导率，所有掺杂Pb的样品在整个工作温度范围内（300‒723 K）都能保持稳定的 p 型传输特性。本工作表明Pb对于BiSbSe 3 来说是一种成功的 p 型掺杂剂 BiSbSe 3 is an intrinsic n‐type thermoelectric material, which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure, and it exhibits excellent thermoelectric properties in the mid‐temperature region. However, there is little research on p‐type BiSbSe 3 . This work realized the successful preparation of p‐type BiSbSe 3 through Pb doping. The thermoelectric transport properties of Pb‐doped p‐type BiSbSe 3 were investigated. Pb doping could further reduce the thermal conductivity of BiSbSe 3 . All Pb‐doped samples exhibited and maintained stable p‐type transmission throughout the working temperature range (300–723 K). This work proves that Pb can be successfully used as a p‐type dopant for BiSbSe 3 .