First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size
Soo Man Seo, H. Aikawa, Soo Gil Kim, T. Nagase, Yuich Ito, Tae Jung Ha, Kenichi Yoshino, Bo Kyung Jung, T. Oikawa, Ku Youl Jung, Hyun In Moon, Bum Su Kim, Fumiyoshi Matsuoka, Kosuke Hatsuda, Katsuhiko Hoya, Seiyon Kim, Sunghoon Lee, Myung-Hee Na, Seon Yong
Abstract
It is true that STT-MRAM has been in the spotlight for embedded memory applications, but it has been challenging to enter into high-density memory applications due to area scalability and cost. In this paper, the authors report for the first time the performance of 1 selector-l MTJ (ISIM) cells integrated in 45 nm of pitch and 20nm of MTJ CD on CMOS circuit using As-doped SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> selector. This paper shows the potential of the cross-point MRAM for the application of high-density and low-cost memory.