A GaN MMIC Wideband Continuous-Mode Doherty Power Amplifier for 6G FR3 cmWave Applications
Han Zhou, Victor Åberg, Haojie Chang, Christian Fager
Abstract
This paper presents a 10−14 GHz Doherty power amplifier (PA) implemented in GaN on SiC MMIC process aimed for future 6G FR3 centimeter-wave (cmWave) applications. We propose the theory and design of the continuous-mode (CM) operations to extend Doherty PA bandwidth. To demonstrate the viability of the concept, a prototype GaN MMIC CM Doherty PA was fabricated and fully characterized. Experimental results exhibit a peak power added efficiency (PAE) of 28% − 38% and back-off PAE of 21% − 31%, respectively, with an output power higher than 34 dBm across the operating frequencies.
Topics & Concepts
Monolithic microwave integrated circuitAmplifierWidebandElectrical engineeringPower (physics)Gallium nitrideMode (computer interface)Electronic engineeringMaterials scienceEngineeringComputer sciencePhysicsCMOSQuantum mechanicsLayer (electronics)Operating systemComposite materialAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignGaN-based semiconductor devices and materials