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Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

Tuerxun Ailihumaer, Hongyu Peng, Yafei Liu, Balaji Raghothamachar, Michael Dudley, Gilyong Chung, Ian Manning, Edward Sanchez

2021Journal of Electronic Materials17 citationsDOI

Topics & Concepts

Materials scienceSynchrotronDislocationWaferCrystallographyCrystal (programming language)Seed crystalSilicon carbideCrystal growthBasal planeDiffractionCondensed matter physicsOpticsSingle crystalOptoelectronicsComposite materialChemistryPhysicsComputer scienceProgramming languageSilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesThin-Film Transistor Technologies
Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals | Litcius