Computational investigation on the photovoltaic performance of an efficient GeSe-based dual-heterojunction thin film solar cell
Jaker Hossain, Bipanko Kumar Mondal, Shaikh Khaled Mostaque
Abstract
Abstract This article reports the design and computational analysis of an efficient GeSe-based n -ZnSe/ p -GeSe/ p + -WSe 2 dual-heterojunction (DH) thin film solar cell using SCAPS-1D simulation program with physical parameters from the literature. The device has been optimized considering the thickness, doping and defect density of each layer. The optimized device shows an efficiency of ∼42.18% with a short circuit current density, J SC of 47.84 mA cm −2 , an open circuit voltage, V OC of 1.07 V and fill factor, FF of 82.80%, respectively that remains within the Shockley-Queisser limit of a DH solar cell. The raised built-in potential developed between the two interfaces of the devices produces a surpassing V OC . The higher J SC is attributed to the current generated by absorption of sub-band gap photons by a tail-states-assisted two-step photon upconversion mechanism in the WSe 2 back surface field layer. These results indicate the potential of manufacturing the high efficiency GeSe-based DH solar cell in future.