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Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Dongyang Xue, Heqiu Zhang, Jun Liu, Xiaochuan Xia, Wenping Guo, Huishi Huang, Nanfa Xu, Qingnan Xi, Hongwei Liang

2020Materials Science in Semiconductor Processing10 citationsDOI

Topics & Concepts

X-ray photoelectron spectroscopyHigh-electron-mobility transistorMaterials scienceContact angleGallium nitrideAnalytical Chemistry (journal)Surface roughnessWide-bandgap semiconductorOptoelectronicsNanotechnologyChemical engineeringTransistorComposite materialChemistryLayer (electronics)EngineeringChromatographyPhysicsQuantum mechanicsVoltageAnalytical Chemistry and SensorsGas Sensing Nanomaterials and SensorsGaN-based semiconductor devices and materials
Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment | Litcius