Atomic-displacement threshold energies and defect generation in irradiated <i>β</i>-Ga2O3: A first-principles investigation
Blair Tuttle, Nathaniel J. Karom, Andrew O’Hara, Ronald D. Schrimpf, Sokrates T. Pantelides
Abstract
Gallium oxide is an emerging wide-bandgap semiconductor with promise for applications in space systems that may be exposed to energetic particles. We use molecular dynamics simulations, based on first principles density-functional methods, to determine the nature and stability of the defects generated by atoms knocked-out by particle irradiation at near threshold energies (found to be 28±1eV for Ga and 14±1eV for O). For Ga atoms, several types of low energy knock-out events result in defect complexes, but the final structures depend critically on the initial displacement direction. In contrast, a vacancy plus a peroxide linkage occurs in all types of low energy knock-out events of O atoms. Based on energy-barrier calculations, there is a low (high) probability for Ga (O) defect recombination. The electronic structure of residual, relaxed defects generated by Ga knock-outs reveals defect levels near the band edges.