Correlating Interface and Border Traps With Distinctive Features of <i>C</i>–<i>V</i> Curves in Vertical Al<sub>2</sub>O<sub>3</sub>/GaN MOS Capacitors
Nicolò Zagni, Manuel Fregolent, G. Verzellesi, A. Marcuzzi, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eldad Bahat‐Treidel, Enrico Brusaterra, Frank Brunner, Oliver Hilt, Matteo Meneghini, Paolo Pavan
Abstract
In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> – <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> curves in vertical Al <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{3}}$</tex-math> </inline-formula> /gallium-nitride (GaN) MOS capacitors. First, pulsed <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> – <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> curves were characterized during the application of quiescent gate bias stresses of different magnitudes and signs. This characterization revealed four main distinctive features: 1) rightward rigid shift; 2) leftward rigid shift; 3) decrease of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta$</tex-math> </inline-formula> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta$</tex-math> </inline-formula> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> slope; and 4) formation of a hump in a gate bias range before the accumulation of electrons at the oxide/semiconductor interface. By means of a combined experimental/simulation analysis, these features were univocally attributed to specific ITs or BTs in the overall trap distribution. The simulation-aided analysis enhances the physical understanding of the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> – <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> curves features and increases the dependability of the adopted IT measurement technique, allowing for a more rapid process optimization and device technology development.