Strain Heterogeneity and Extended Defects in Halide Perovskite Devices
Kieran W. P. Orr, Jiecheng Diao, Krishanu Dey, Madsar Hameed, Miloš Dubajić, H. Gilbert, Thomas A. Selby, Szymon J. Zelewski, Yutong Han, Melissa R. Fitzsimmons, Bart Roose, Peng Li, Jiadong Fan, Huaidong Jiang, Joe Briscoe, Ian Robinson, Samuel D. Stranks
Abstract
High Resolution Image Download MS PowerPoint Slide Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs 0.1 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 and Cs 0.15 FA 0.85 SnI 3 (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and striking intragrain and grain-to-grain strain heterogeneity, identifying distinct islands of tensile and compressive strain inside grains. Additionally, we directly image dislocations with surprising regularity in Cs 0.15 FA 0.85 SnI 3 grains and find evidence for dislocation-induced antiphase boundary formation. Our results shine a rare light on the nanoscale strains in these materials in their technologically relevant device setting.