Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies
Maciej Kozubal, K. Pągowska, Andrzej Taube, R. Kruszka, Iwona Sankowska, Kamińska Eliana
Topics & Concepts
Materials scienceOhmic contactAnnealing (glass)FluenceDopingDopantDopant ActivationElectrical resistivity and conductivitySheet resistanceContact resistanceIon implantationGallium nitrideOptoelectronicsAnalytical Chemistry (journal)IrradiationNanotechnologyLayer (electronics)Composite materialIonChemistryPhysicsChromatographyElectrical engineeringEngineeringNuclear physicsOrganic chemistryGaN-based semiconductor devices and materialsSemiconductor materials and devicesSemiconductor materials and interfaces