Ternary Conductance Switching Realized by a Pillar[5]arene‐Functionalized Two‐Dimensional Imine Polymer Film
Yaru Song, Guangyuan Feng, Chenfang Sun, Qiu Liang, Lingli Wu, Xi Yu, Shengbin Lei, Wenping Hu
Abstract
Abstract Nowadays, most manufacturing memory devices are based on materials with electrical bistability (i. e., “0” and “1”) in response to an applied electric field. Memory devices with multilevel states are highly desired so as to produce high‐density and efficient memory devices. Herein, we report the first multichannel strategy to realize a ternary‐state memristor. We make use of the intrinsic sub‐nanometer channel of pillar[5]arene and nanometer channel of a two‐dimensional imine polymer to construct an active layer with multilevel channels for ternary memory devices. Low threshold voltage, long retention time, clearly distinguishable resistance states, high ON/OFF ratio (OFF/ON1/ON2=1 : 10 : 10 3 ), and high ternary yield (75 %) were obtained. In addition, the flexible memory device based on 2DP TPAZ+TAPB can maintain its stable ternary memory performance after being bent 500 times. The device also exhibits excellent thermal stability and can tolerate a temperature as high as 300 °C. It is envisioned that the results of this work will open up possibilities for multistate, flexible resistive memories with good thermal stability and low energy consumption, and broaden the application of pillar[ n ]arene.