Enhancing the Spin–Orbit Torque Efficiency by the Insertion of a Sub-nanometer β-W Layer
Yaojin Li, Xi Zha, Yifan Zhao, Qi Lu, Boyan Li, Chunlei Li, Ziyao Zhou, Ming Liu
Abstract
Spin–orbit torque (SOT) efficiency is one of the key issues of spintronics. However, enhancing the SOT efficiency is usually limited by the positive correlation between resistivity and the spin Hall ratio, where a high resistivity often accompanies a large spin Hall ratio. Here, we demonstrate that sub-nanometer β-W intercalation has a considerable impact on the SOT efficiency in α-W (6 nm)/Co (8 nm)/Pt (3 nm) samples. The damping-like SOT efficiency per unit current density, ξDLj, of α-W (5.7 nm)/β-W (0.3 nm)/Co (8 nm)/Pt (3 nm) shows a ∼ 296% enhancement compared to that of the α-W/Co/Pt system. Meanwhile, a resistivity similar to that of α-W and the spin Hall ratio larger than β-W induce a giant damping-like SOT efficiency per applied electric field, ξDLE, which is about 12.1 times larger than that of β-W. Our findings will benefit the SOT devices by reducing energy consumption.