Magnetotransport in semiconductors and two-dimensional materials from first principles
Dhruv C. Desai, Bahdan Zviazhynski, Jin-Jian Zhou, Marco Bernardi
Abstract
Studies of transport in magnetic fields are key for research in semiconductors and quantum materials. However, accurately predicting magnetotransport phenomena and the microscopic mechanisms governing them remains challenging. Here, the authors develop an approach to solve numerically the electron Boltzmann equation in a magnetic field using first-principles electron-phonon interactions. The magnetoresistance, Hall coefficient, and Hall factor of various semiconductors and two-dimensional materials are accurately predicted. These advances extend the scope of first-principles studies of transport to include applied magnetic fields.
Topics & Concepts
MagnetoresistanceCondensed matter physicsBoltzmann equationGrapheneSemiconductorScatteringMagnetic fieldPhononMaterials scienceMagnetic semiconductorElectronCoupling (piping)PhysicsDopingQuantum mechanicsNanotechnologyOptoelectronicsMetallurgyGraphene research and applicationsQuantum and electron transport phenomenaTopological Materials and Phenomena