Holistic Approach toward a Damage-Less Sputtered Indium Tin Oxide Barrier Layer for High-Stability Inverted Perovskite Solar Cells and Modules
Sathy Harshavardhan Reddy, Francesco Di Giacomo, Fabio Matteocci, Luigi Angelo Castriotta, Aldo Di Carlo
Abstract
and retained approximately 80% of the initial performance after thermal stress at 85 °C for 350 h under ambient conditions.
Topics & Concepts
Materials scienceEnergy conversion efficiencyIndium tin oxideOptoelectronicsPerovskite (structure)SputteringBarrier layerLayer (electronics)PlanarOxideIndiumCopper indium gallium selenide solar cellsNanotechnologyChemical engineeringThin filmMetallurgyComputer scienceComputer graphics (images)EngineeringPerovskite Materials and ApplicationsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films