Filamentary-based organic memristors for wearable neuromorphic computing systems
Chang‐Jae Beak, Ji-Hwan Lee, Junseok Kim, Jiwoo Park, Sin‐Hyung Lee
Abstract
Abstract A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under electric stimuli, and it results in the resistive switching characteristics. To realize the bio-inspired computing systems utilizing the organic memristors, it is essential to effectively engineer the CF growth for emulating the complete synaptic functions in the device. Here, the fundamental principles underlying the operation of organic memristors and parameters related to CF growth are discussed. Additionally, recent studies that focused on controlling CF growth to replicate synaptic functions, including reproducible resistive switching, continuous conductance levels, and synaptic plasticity, are reviewed. Finally, upcoming research directions in the field of organic memristors for wearable smart computing systems are suggested.