First Demonstration of BEOL-Compatible 3D Vertical FeNOR
Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong
Abstract
In this work, we present and experimentally demonstrate the world's first back-end-of-line (BEOL) compatible vertical ferroelectric NOR (FeNOR) memory. The key highlights of this work are outlined below: (1) Side-fin structure has been meticulously designed and realized to enhance the ferroelectric switching and to suppress the cell-to-cell interference. (2) Outstanding I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>/+Ioff ratio (> 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup>) and memory window (~4 V) has been achieved, surpassing the performance of other reported 3D FeFETs. (3) Leveraging the advantages of ferroelectric switching, low programming voltage, rapid programming speed, and good endurance have been achieved. The realization of our 3D FeNOR presents a compelling alternative for applications requiring low power consumption and high-speed operation.