Review-Hysteresis in Carbon Nano-Structure Field Effect Transistor
Yuxuan Lu, Chih‐Ting Lin, Ming‐Hsui Tsai, Kuan-Chou Lin
Abstract
In recent decades, the research of nano-structure devices (e.g., carbon nanotube and graphene) has experienced rapid growth. These materials have supreme electronic, thermal, optical and mechanical properties and have received widespread concern in different fields. It is worth noting that gate hysteresis behavior of field effect transistors can always be found in ambient conditions, which may influence the transmission appearance. Many researchers have put forward various views on this question. Here, we summarize and discuss the mechanisms behind hysteresis, different influencing factors and improvement methods which help decrease or eliminate unevenness and asymmetry.
Topics & Concepts
HysteresisCarbon nanotubeMaterials scienceNanotechnologyField-effect transistorNano-GrapheneTransistorAsymmetryEngineering physicsField (mathematics)Thermal hysteresisCondensed matter physicsOptoelectronicsElectrical engineeringEngineeringPhysicsComposite materialVoltageMathematicsPure mathematicsQuantum mechanicsPhase transitionGraphene research and applicationsDiamond and Carbon-based Materials ResearchAdvancements in Semiconductor Devices and Circuit Design