Mixed‐Dimensional In‐Plane Heterostructures from 1D Mo<sub>6</sub>Te<sub>6</sub> and 2D MoTe<sub>2</sub> Synthesized by Te‐Flux‐Controlled Chemical Vapor Deposition
Hyeonkyeong Kim, James E. Johns, Youngdong Yoo
Abstract
Abstract Mixed‐dimensional van der Waals heterostructures are scientifically important and practically useful because of their interesting exotic properties resulting from their novel hybrid structures. This study reports the composition‐ and phase‐selective fabrication of low‐dimensional molybdenum/tellurium (Mo/Te) compounds and the direct synthesis of mixed‐dimensional in‐plane 1D–2D Mo 6 Te 6 –MoTe 2 heterostructures. The composition and phase of the Mo/Te compounds are controlled by changing the Te atomic flux that is adjusted by the Te temperature. Metallic 1D Mo 6 Te 6 wires with an intrinsic 1D structure with a diameter of 3–8 nm and length of 100–300 nm are synthesized to form wire networks under low Te flux conditions, whereas the semiconducting few‐layer 2H MoTe 2 films preferentially oriented along the <0001> direction are obtained under high Te flux. Under medium Te flux, the mixed‐dimensional in‐plane 1D–2D Mo 6 Te 6 –MoTe 2 heterostructures are synthesized in which the semiconducting few‐layer 2H MoTe 2 circular domains are edge‐contacted by the metallic 1D Mo 6 Te 6 wire networks. Furthermore, the present Te‐flux‐controlled method reveals that the 1D Mo 6 Te 6 networks change to few‐layer MoTe 2 films as the Te flux increases. The in‐plane 1D–2D Mo 6 Te 6 –MoTe 2 heterostructures synthesized by this method can be considered as advanced edge‐contacted 2D semiconductors for high‐performance 2D electronics.