Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
Dario Schiavon, E. Litwin‐Staszewska, R. Jakieła, Szymon Grzanka, P. Perlin
Abstract
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
Topics & Concepts
GermaniumMetalorganic vapour phase epitaxyIndiumDopingMaterials scienceGrowth rateMorphology (biology)Analytical Chemistry (journal)OptoelectronicsNanotechnologyEpitaxyChemistryLayer (electronics)SiliconGeometryChromatographyBiologyGeneticsMathematicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesThin-Film Transistor Technologies