Optimization of oxygen vacancy concentration in HfO<sub>2</sub>/HfO<sub>x</sub> bilayer-structured ultrathin memristors by atomic layer deposition and their biological synaptic behavior
Chang Liu, Chunchen Zhang, Yanqiang Cao, Di Wu, Peng Wang, Aidong Li
Abstract
Tuning the oxygen vacancy concentration in HfO<sub>2</sub>/HfO<sub>x</sub> bilayer-structured ultrathin memristors to simulate synaptic functions.
Topics & Concepts
Materials scienceBilayerAtomic layer depositionMemristorOxygenLayer (electronics)Vacancy defectResistive random-access memoryDeposition (geology)OptoelectronicsNanotechnologyChemical engineeringCrystallographyElectronic engineeringPhysical chemistryMembraneEngineeringSedimentPaleontologyElectrodeGeneticsChemistryBiologyOrganic chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices