Controllable electronic properties, contact barriers and contact types in a TaSe<sub>2</sub>/WSe<sub>2</sub> metal–semiconductor heterostructure
Son T. Nguyen, Cuong Q. Nguyen, Nguyen N. Hieu, Huynh V. Phuc, Ch. V. Nguyen
Abstract
Herein, we design a metal–semiconductor heterostructure combining metallic TaSe 2 and semiconducting WSe 2 materials and investigate its atomic structure, electronic properties and controllable contact types using first-principles calculations.
Topics & Concepts
HeterojunctionMaterials scienceOhmic contactSchottky barrierSemiconductorOptoelectronicsSchottky diodeNanotechnologyLayer (electronics)Diode2D Materials and ApplicationsGraphene research and applicationsMXene and MAX Phase Materials