Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD)
Frank Wilson Amalraj, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori
Topics & Concepts
Gallium nitrideMetalorganic vapour phase epitaxyAnalytical Chemistry (journal)Chemical vapor depositionCrystal (programming language)EpitaxyScanning electron microscopeChemistryNitrideGalliumMaterials scienceHydrogenNitrogenOptoelectronicsNanotechnologyLayer (electronics)Composite materialProgramming languageOrganic chemistryChromatographyComputer scienceGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials