GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications
Swagata Samanta
Abstract
Abstract This review article discusses the development of gallium arsenide (GaAs)-based resonant tunneling diodes (RTD) since the 1970s. To the best of my knowledge, this article is the first review of GaAs RTD technology which covers different epitaxial-structure design, fabrication techniques, and characterizations for various application areas. It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments, as well as have an outlook on the current trends and future developments in GaAs RTD research.
Topics & Concepts
Gallium arsenideQuantum tunnellingResonant-tunneling diodeDiodeOptoelectronicsCharacterization (materials science)FabricationMaterials scienceEpitaxyNanotechnologyEngineering physicsElectrical engineeringEngineeringPhysicsOpticsQuantum wellLaserLayer (electronics)PathologyAlternative medicineMedicineSemiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesPhotonic and Optical Devices