Plasmon-Assisted Si-ITO Integrated Electro-Optical Rib-Shape Modulator
Daniil S. Zemtsov, Ivan A. Pshenichnyuk, S. S. Kosolobov, Anastasia K. Zemtsova, Д. М. Жигунов, A. S. Smirnov, К.Н. Гарбузов, Vladimir P. Drachev
Abstract
An integrated plasmonic indium-tin-oxide (ITO)-based silicon electro-optical modulator has been designed, fabricated, and characterized. A sandwich structure shows a 40 GHz bandwidth at the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$-2$</tex-math></inline-formula> dB level and an extinction ratio of about 1.8 dB. The device is fabricated on a silicon-on-insulator wafer. A silicon waveguide is excluded from the electric circuit. Instead, an ITO layer is used both as a bottom electrical contact and as an electric field-sensitive medium. As a gate oxide, we used a silicon dioxide layer capped with a gold top electrode to form a capacitor. The dielectric rib inside the ITO-Au capacitor forms a coupling interface between the TE photonic and plasmonic modes.