High-performance sol–gel processed a-IGZO TFTs with low-melting point metal electrodes
Han He, Hao Huang, Chuan Peng, Guanshun Liu, Jiajie Liu, Sili Duan, Bingsuo Zou, Da Wan
Abstract
Using low-melting point metals (In, Ga) as contact electrodes significantly enhances the performance of sol–gel processed a-IGZO TFTs.
Topics & Concepts
Materials scienceElectrodeMelting pointThin-film transistorOptoelectronicsMetalComposite materialMetallurgyLayer (electronics)Physical chemistryChemistryThin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsZnO doping and properties