Wavelength‐Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe<sub>2</sub> for Artificial Synaptic Features
Jiayang Jiang, Weiting Xu, Zhenhao Sun, Lei Fu, Shixiong Zhang, Biao Qin, Teng Fan, Guoping Li, Shuaiyu Chen, Shengxue Yang, Weikun Ge, Bo Shen, Ning Tang
Abstract
Abstract Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two‐terminal synaptic device based on a doped PdSe 2 flake is proposed to imitate the key neural functions in an optical pathway. Due to the wavelength‐dependent desorption of oxygen clusters near the intrinsic selenide vacancy defects, the doped PdSe 2 photodetector achieves a high negative photoresponsivity of −7.8 × 10 3 A W −1 at 473 nm and a positive photoresponsivity of 181 A W −1 at 1064 nm. This wavelength‐selective bi‐direction photoresponse endows an all‐optical pathway to imitate the fundamental functions of artificial synapses on a device level, such as psychological learning and forgetting capability, as well as dynamic logic functions. The underpinning photoresponse is further demonstrated on a flexible platform, providing a viable technology for neuromorphic computing in wearable electronics. Furthermore, the p‐type doping results in an effective increase of the channel's electrical conductivity and a significant reduction in power consumption. Such low‐power‐consuming optical synapses with simple device architecture and low‐dimensional features demonstrate tremendous promise for building multifunctional artificial neuromorphic systems in the future.