Litcius/Paper detail

Low-temperature characteristics of resistive switching memory devices based on reduced graphene oxide-phosphor composites toward reliable cryogenic electronic devices

J. R. Rani, Nayan C. Das, Minjae Kim, Jae‐Hyung Jang

2022Carbon10 citationsDOI

Topics & Concepts

Materials scienceOptoelectronicsGraphenePhosphorResistive touchscreenReset (finance)ElectronicsOxidePhotoconductivityVoltageLow voltageNanotechnologyElectrical engineeringEngineeringEconomicsMetallurgyFinancial economicsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices
Low-temperature characteristics of resistive switching memory devices based on reduced graphene oxide-phosphor composites toward reliable cryogenic electronic devices | Litcius