Quantum confinement‐induced enhanced nonlinearity and carrier lifetime modulation in two‐dimensional tin sulfide
Feng Zhang, Ning Xu, Jinlai Zhao, Yunzheng Wang, Xiantao Jiang, Ye Zhang, Weichun Huang, Lanping Hu, Yanfeng Tang, Shixiang Xu, Han Zhang
Abstract
Abstract Two‐dimensional tin sulfide (SnS), as a black phosphorus‐analogue binary semiconductor, has received considerable attention in photonics and optoelectronics. Herein, the third‐order nonlinearity susceptibility Im χ 3 is enhanced from −(6.88 ± 0.10) × 10 −14 esu to −(15.90 ± 0.27) × 10 −14 esu by the size‐related quantum confinement in layered SnS nanosheets. Due to the energy level alignment, a phonon‐bottleneck effect is observed, which leads to a prolonged carrier lifetime. These results provide a platform for actively tuning the linear and nonlinear optics, and pave the way for designing SnS‐based tunable and anisotropic optoelectronic devices.