Quasi-vertical GaN merged PN Schottky diode by using the p-NiO/n-GaN heterojunction
Genzhuang Li, Yuan Ren, Lin Wang, Qiliang Wang, Liang He, Liuan Li, Liuan Li
Topics & Concepts
Materials scienceHeterojunctionOptoelectronicsNon-blocking I/OSchottky diodeDiodeElectric fieldSilicon carbideBreakdown voltageSchottky barrierAnodeWide-bandgap semiconductorGallium nitrideReverse leakage currentSapphireVoltageElectrical engineeringNanotechnologyOpticsChemistryElectrodePhysicsBiochemistryQuantum mechanicsCatalysisLaserMetallurgyEngineeringPhysical chemistryLayer (electronics)GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties