A Non-Redundant Latch With Key-Node-Upset Obstacle of Beneficial Efficiency for Harsh Environments Applications
Yan Liu, Yan Li, Xu Cheng, Jun Han, Xiaoyang Zeng
Abstract
With the scaling down of process, single event upset has been a critical issue for integrated circuits. It is much more likely to occur multiple-node upsets (MNUs) in CMOS ICs in advanced technology. However, the problem remains unsolved because of the lack of efficient methods. In this article, a non-redundant triple-node-upset(TNU)-tolerant latch with high reliability is proposed in 28 nm CMOS technology. The proposed latch named KOBE reduces the number of inner-sensitive nodes as well as the redundancy of the TNU-tolerant latch. In simulations, the proposed KOBE latch performs faster and lower power with higher reliability than most of the TNU-tolerant latches proposed before. The post-layout parasitic extracted simulations show that the proposed KOBE latch has an average improvement of 52.5% in a Power-Area-Delay Product (PADP) compared with the recently reported TNU-hardened latch at a supply voltage of 0.9 V, a working temperature of 27 °C. What’s more, by changing the working voltage and temperature, it is proved that the proposed KOBE latch has a better performance in a harsh environment. The results show that the proposed KOBE latch is of high beneficial efficiency and high reliability, thus can be used in safety-critical applications.