Thin dielectric-layer-enabled low-voltage operation of fully printed flexible carbon nanotube thin-film transistors
Jialuo Chen, Saswat Mishra, Diego Vaca, Nitish Kumar, Woon‐Hong Yeo, Suresh K. Sitaraman, Satish Kumar
Abstract
Abstract The quality of printable dielectric layer has become one of the major obstacles to achieving high-performance fully printed transistors. A thick dielectric layer will require high gate voltage to switch the transistors on and off, which will cause high power dissipation in printed devices. In response to this challenge, fully printed carbon nanotube (CNT)-based thin-film transistors (TFTs) have been fabricated on flexible membranes such as polyimide and liquid crystal polymer using aerosol jet printing. These devices can be operated at bias voltages below ±10 V (drain/gate voltages around ±6 V). This is much smaller than the previously reported values for fully printed CNT-TFTs because of using xdi-dcs (mixture of poly(vinylphenol)/poly (methylsilsesquioxane)) as the dielectric and using a single printing method. The lower voltage is a consequence of a thin dielectric layer (∼300 nm) and good uniformity in the printed CNT network. The printed CNT-TFTs show on/off ratio >10 5 , and mobility >5 cm 2 V −1 s −1 . Layer-by-layer deposition of CNT allows highly uniform and dense network formation, and the optimization of the xdi-dcs concentration using natural butyl alcohol provides high-yield printing of a thin dielectric layer. Collectively, this work shows the potential of using fully printed CNT-TFTs in various flexible electronic applications such as wearable sensors, actuators, artificial skin, displays and wireless tags and antennas.